N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features • 20V/6A , RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 and TSSOP-8 Packages Applications • Power Manageme

文件：141.47 Kbytes 页数：11 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET Features • 20V/6A , RDS(ON)=28mΩ(typ.) @ VGS=4.5V RDS(ON)=38mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SO-8 and TSSOP-8 Packages Applications • Power Manageme

文件：141.47 Kbytes 页数：11 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode Power MOSFET

文件：595.53 Kbytes 页数：6 Pages

BELLING

上海贝岭

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● 20V , 26A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m @V Ω GS=2.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-251 & TO-252 package.

文件：59.68 Kbytes 页数：5 Pages

CET

华瑞