APM9935KC-TRL

Dual P-Channel Enhancement Mode MOSFET

Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy

APM9935KC-TU

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy

APM9935KC-TUL

DualP-ChannelEnhancementModeMOSFET

Features •-20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=38mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSy

CEM9935

DualN-ChannelEnhancementModeFieldEffectTransistor

CEM9935A

DualN-ChannelEnhancementModeFieldEffectTransistor

CEM9935A

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,6.0A,RDS(ON)=36mW@VGS=10V. RDS(ON)=42mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RDS(ON)=75mW@VGS=2.5V. Leadfreeproductisacquired.

CHM9935AJPT

DualN-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT6Ampere FEATURE *Smallflatpackage.(SO-8) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CYRF9935

WirelessUSB??NX2.4GHzLowPowerRadio

L9935

TWO-PHASESTEPPERMOTORDRIVER

Description TheL9935isatwo-phasesteppermotordrivercircuitsuitedtodrivebipolarsteppermotors. Thedevicecanbecontrolledbyaserialinterface(SPI).Allprotectionsrequiredtodesignawellprotectedsystem(short-circuit,overtemperature,crossconductionetc.)areintegrated.

N9935A

FieldFoxHandheldAnalyzers