APM9932CKC-TRL

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/9A, RDS(ON)=12mΩ(typ.)@VGS=4.5V RDS(ON)=18mΩ(typ.)@VGS=2.5V •P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=50mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFree

APM9932CKC-TU

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/9A, RDS(ON)=12mΩ(typ.)@VGS=4.5V RDS(ON)=18mΩ(typ.)@VGS=2.5V •P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=50mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFree

APM9932CKC-TUL

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/9A, RDS(ON)=12mΩ(typ.)@VGS=4.5V RDS(ON)=18mΩ(typ.)@VGS=2.5V •P-Channel -20V/-6A, RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=50mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFree

APM9932SLASHCKC-TR

DualEnhancementModeMOSFET(N-andP-Channel)

Features •N-Channel 20V/15A,RDS(ON)=12mΩ(typ.)@VGS=10V RDS(ON)=17mΩ(typ.)@VGS=4.5V •P-Channel -20V/-6A,RDS(ON)=30mΩ(typ.)@VGS=-4.5V RDS(ON)=45mΩ(typ.)@VGS=-2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •Reliable

AT9932

AutomotiveBoost-BuckLEDLampDriverIC

AT9932TS-G

AutomotiveBoost-BuckLEDLampDriverIC

GAPM9932

MinisizeofDiscretesemiconductorelements

GC9932

SchottkyBarrierDiodesTMForMixersandDetectors

DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre

MAX9932

On-BoardQuasi-MeasurementModeCircuitry

MAX9932

2MHzto1.6GHz45dBRF-DetectingControllersandRFDetector

GeneralDescription TheMAX9930–MAX9933low-cost,low-powerlogarithmicamplifiersaredesignedtocontrolRFpoweramplifiers(PA)andtransimpedanceamplifiers(TIA),andtodetectRFpowerlevels.Thesedevicesaredesignedtooperateinthe2MHzto1.6GHzfrequencyrange. Features ♦