丝印：APM4953；Package：SOP-8；-30V P-Channel MOSFET

Features VDS (V) = -30V ID = -5.3A (VGS = 10V) RDS(ON)

文件：534.15 Kbytes 页数：6 Pages

UMW

友台半导体

丝印：APM4953；Package：SOP-8；-30V P-Channel MOSFET

Features VDS (V) = -30V ID = -5.3A (VGS = 10V) RDS(ON)

文件：538.74 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

Dual P-Channel 30V (D-S) MOSFET

FEATURES RDS(ON)= 60mQ@VGs=-10V (Max) RDS(ON)= 90mQ@VGs=-4.5V (Max)

文件：2.01202 Mbytes 页数：5 Pages

TECHPUBLIC

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Dual P-Channel Enhancement Mode Mosfet

文件：500.19 Kbytes 页数：7 Pages

ARTSCHIP

Dual P-Channel Enhancement Mode MOSFET

文件：221.02 Kbytes 页数：9 Pages

ANPEC

茂达电子

-30V P-Channel MOSFET

类型: P沟道 漏源电压(Vdss): 30V 连续漏极电流(Id): 5.3A

XBLW

芯伯乐

场效应管

HXY MOSFET

华轩阳电子

场效应管（MOSFET）

Techpublic

台舟电子

Dual P-Channel Enhancement Mode MOSFET

Features • -30V/-4.9A ,RDS(ON)=53mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer,Portable

文件：119.05 Kbytes 页数：10 Pages

ANPEC

茂达电子

Dual P-Channel Enhancement Mode MOSFET

Features • -30V/-4.9A ,RDS(ON)=53mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer,Portable

文件：119.05 Kbytes 页数：10 Pages

ANPEC

茂达电子