Dual N-Channel Enhancement Mode MOSFET

Features • 20V/6A, RDS(ON) =25mΩ(typ.) @ VGS = 4.5V RDS(ON) =40mΩ(typ.) @ VGS = 2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：120.14 Kbytes 页数：10 Pages

ANPEC

茂达电子

Dual N-Channel Enhancement Mode MOSFET

Features • 20V/6A, RDS(ON) =25mΩ(typ.) @ VGS = 4.5V RDS(ON) =40mΩ(typ.) @ VGS = 2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：120.14 Kbytes 页数：10 Pages

ANPEC

茂达电子

Dual N-Channel Enhancement Mode MOSFET

Features • 20V/6A, RDS(ON) =25mΩ(typ.) @ VGS = 4.5V RDS(ON) =40mΩ(typ.) @ VGS = 2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：120.14 Kbytes 页数：10 Pages

ANPEC

茂达电子

Dual N-Channel Enhancement Mode MOSFET

Features • 20V/6A, RDS(ON) =25mΩ(typ.) @ VGS = 4.5V RDS(ON) =40mΩ(typ.) @ VGS = 2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems

文件：120.14 Kbytes 页数：10 Pages

ANPEC

茂达电子

Advanced Planar Technology Low On-Resistance

文件：227.79 Kbytes 页数：10 Pages

IRF