Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/5A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =45mΩ(typ.) @ VGS = 4.5V • P-Channel -30V/-5A, RDS(ON) =40mΩ(typ.) @ VGS =-10V RDS(ON) =55mΩ(typ.) @ VGS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free A

文件：152.89 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/5A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =45mΩ(typ.) @ VGS = 4.5V • P-Channel -30V/-5A, RDS(ON) =40mΩ(typ.) @ VGS =-10V RDS(ON) =55mΩ(typ.) @ VGS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free A

文件：152.89 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/5A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =45mΩ(typ.) @ VGS = 4.5V • P-Channel -30V/-5A, RDS(ON) =40mΩ(typ.) @ VGS =-10V RDS(ON) =55mΩ(typ.) @ VGS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free A

文件：152.89 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/5A, RDS(ON) =35mΩ(typ.) @ VGS = 10V RDS(ON) =45mΩ(typ.) @ VGS = 4.5V • P-Channel -30V/-5A, RDS(ON) =40mΩ(typ.) @ VGS =-10V RDS(ON) =55mΩ(typ.) @ VGS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free A

文件：152.89 Kbytes 页数：13 Pages

ANPEC

茂达电子

STANDARD LED LAMPS(RECTANGULAR TYPES)

文件：505.17 Kbytes 页数：2 Pages

YSTONE

早安股份