Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

文件：153.75 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

文件：153.75 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

文件：270.71 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

文件：153.75 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/7A, RDS(ON)=17mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=4.5V • P-Channel -30V/-5.5A, RDS(ON)=35mΩ(typ.) @ VGS=-10V RDS(ON)=51mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON)

文件：153.75 Kbytes 页数：13 Pages

ANPEC

茂达电子

SAW Components Low-Loss Filter 110,59 MHz

文件：74.74 Kbytes 页数：5 Pages

EPCOS

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