Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/7A, RDS(ON) = 18mW (typ.) @ VGS = 10V RDS(ON) = 23mW (typ.) @ VGS = 4.5V • P-Channel -30V/-6A, RDS(ON) = 32mW (typ.) @ VGS =-10V RDS(ON) = 42mW (typ.) @ VGS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Ava

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茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/7A, RDS(ON) = 18mW (typ.) @ VGS = 10V RDS(ON) = 23mW (typ.) @ VGS = 4.5V • P-Channel -30V/-6A, RDS(ON) = 32mW (typ.) @ VGS =-10V RDS(ON) = 42mW (typ.) @ VGS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Ava

文件：250.63 Kbytes 页数：13 Pages

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茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

• N-Channel\n   30V/7A,\n      RDS(ON) = 18mW (typ.) @ VGS = 10V\n      RDS(ON) = 23mW (typ.) @ VGS = 4.5V\n• P-Channel\n   -30V/-6A,\n      RDS(ON) = 32mW (typ.) @ VGS =-10V\n      RDS(ON) = 42mW (typ.) @ VGS =-4.5V\n• Super High Dense Cell Design\n• Reliable and Rugged\n• Lead Free Available (RoHS;

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茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/7A, RDS(ON) = 18mW (typ.) @ VGS = 10V RDS(ON) = 23mW (typ.) @ VGS = 4.5V • P-Channel -30V/-6A, RDS(ON) = 32mW (typ.) @ VGS =-10V RDS(ON) = 42mW (typ.) @ VGS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Ava

文件：250.63 Kbytes 页数：13 Pages

ANPEC

茂达电子

Dual Enhancement Mode MOSFET (N-and P-Channel)

Features • N-Channel 30V/7A, RDS(ON) = 18mW (typ.) @ VGS = 10V RDS(ON) = 23mW (typ.) @ VGS = 4.5V • P-Channel -30V/-6A, RDS(ON) = 32mW (typ.) @ VGS =-10V RDS(ON) = 42mW (typ.) @ VGS =-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Ava

文件：250.63 Kbytes 页数：13 Pages

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茂达电子

STANDARD LED LAMPS

文件：659.3 Kbytes 页数：2 Pages

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