P-Channel Enhancement Mode MOSFET

Features • -30V/-4A, RDS(ON) = 85mΩ(typ.) @ VGS = -10V RDS(ON) = 140mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Bat

文件：115.44 Kbytes 页数：10 Pages

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文件：56.62 Kbytes 页数：4 Pages

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文件：327.32 Kbytes 页数：16 Pages

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