丝印：AO4421；Package：SOP-8；-60V P-Channel MOSFET

Product Summary VDS -60V ID (at VGS=-10V) -6.2A RDS(ON) (at VGS=-10V)

文件：376.62 Kbytes 页数：6 Pages

UMW

友台半导体

P-Channel 60 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg and UIS tested

文件：1.9433 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

60V P-Channel MOSFET

General Description The AO4421 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS -60V ID (at V

文件：1.6605 Mbytes 页数：4 Pages

WHXPCB

万和兴电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4421 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4412 is Pb-free (meets ROHS & Sony 259 specifications). AO4421L is a Green Pr

文件：115.28 Kbytes 页数：4 Pages

AOSMD

万国半导体

isc P-Channel MOSFET Transistor

DESCRIPTION ·High Speed Power Switching, Logic Leve ·Enhanced Avalanche Ruggedness ·Drain Current –ID=-6.2A@ TC=25℃ ·Drain Source Voltage- VDSS= -60V(Min) APPLICATIONS ·Load Switches ·Hard Switching and High Speed Circuit ·BLDC Motor

文件：330.66 Kbytes 页数：4 Pages

ISC

无锡固电

P-Channel MOSFET

■ Features ● VDS (V) =-60V ● ID =-6.2 A (VGS =-10V) ● RDS(ON)

文件：1.27644 Mbytes 页数：4 Pages

KEXIN

科信电子

60V P-Channel MOSFET

文件：161.81 Kbytes 页数：4 Pages

AOSMD

万国半导体

MOSFET

MTW

美台微

P-Channel MOSFET

XW

芯微半导体

场效应管

HXY MOSFET

华轩阳电子