P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4429 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4429 is Pb-free (meets ROHS & Sony 259 specifications). AO4429L is a

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AOSMD

万国半导体

Ultra_Low On-resistance, Simple Drive Requirement

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A-POWER

富鼎先进电子

P-Channel Enhancement Mode MOSFET

Features • -30V/-13A , RDS(ON)=8mW (typ.) @ VGS=-20V RDS(ON)=9mW (typ.) @ VGS=-10V RDS(ON)=13mW (typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • SOP-8 Package Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered

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ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -30V/-13A , RDS(ON)=8mW (typ.) @ VGS=-20V RDS(ON)=9mW (typ.) @ VGS=-10V RDS(ON)=13mW (typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • SOP-8 Package Applications • Power Management in Notebook Computer, Portable Equipment and Battery Powered

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ANPEC

茂达电子