P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-20V) ● RDS(ON)

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KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AON4413 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AON4413 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V

文件：141.88 Kbytes 页数：4 Pages

AOSMD

万国半导体

Simple Drive Requirement, Low On-resistance

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for

文件：74.71 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

P-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for

文件：110.08 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子