P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4427 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4427 is Pb-free (meets ROHS &

文件：142.48 Kbytes 页数：4 Pages

AOSMD

万国半导体

Simple Drive Requirement, Fast Switching Characteristic

BVDSS 35V RDS(ON) 6.6mΩ ID 16A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface

文件：202.9 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

P-Channel Enhancement Mode MOSFET

Features • -30V/-4A, RDS(ON) = 85mΩ(typ.) @ VGS = -10V RDS(ON) = 140mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Bat

文件：115.44 Kbytes 页数：10 Pages

ANPEC

茂达电子

P-Channel Enhancement Mode MOSFET

Features • -30V/-4A, RDS(ON) = 85mΩ(typ.) @ VGS = -10V RDS(ON) = 140mΩ(typ.) @ VGS = -4.5V • Super High Density Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment and Bat

文件：115.44 Kbytes 页数：10 Pages

ANPEC

茂达电子