丝印：NXH；Package：DO-214AA；Automotive and High Reliability TVS Diodes

文件：1.10451 Mbytes 页数：5 Pages

YINT

音特电子

丝印：NXH003P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

The NXH003P120M3F2PTHG is a power module containing 3 m / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. Features • 3 m / 1200 V M3S SiC MOSFET Half−Bridge • HPS DBC • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−

文件：2.10136 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：NXH003P120M3F2PTNG；Package：PIM36；Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

The NXH003P120M3F2PTNG is a power module containing 3 m / 1200 V SiC MOSFET half−bridge and a thermistor with Si3N4 DBC in an F2 package. Features • 3 m / 1200 V M3S SiC MOSFET Half−Bridge • Si3N4 DBC • Thermistor • Pre−Applied Thermal Interface Material (TIM) • Press−Fit Pins • These

文件：2.05307 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：NXH004P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

The NXH004P120M3F2PTHG is a power module containing 4 m / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. Features • 4 m / 1200 V M3S SiC MOSFET Half−Bridge • HPS DBC • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−

文件：2.10996 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：NXH004P120M3F2PTNG；Package：PIM36；Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

The NXH004P120M3F2PTNG is a power module containing 3 m / 1200 V SiC MOSFET half−bridge and a thermistor with Si3N4 DBC in an F2 package. Features • 4 m / 1200 V M3S SiC MOSFET Half−Bridge • Si3N4 DBC • Thermistor • Pre−Applied Thermal Interface Material (TIM) • Press−Fit Pins • These

文件：2.2608 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：NXH006P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

The NXH006P120M3F2PTHG is a power module containing 6 m / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. Features  6 m / 1200 V M3S SiC MOSFET Half−Bridge  HPS DBC  Thermistor  Pre−Applied Thermal Interface Material (TIM)  Press−Fit Pins  These Devic

文件：407.21 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

丝印：NXH006P120MNF2PTG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

The NXH006P120MNF2 is a power module containing an 6 m / 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. Features • 6 m / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Options with So

文件：1.72108 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：NXH007F120M3F2PTHG；Package：F2FULLBR；Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

The NXH007F120M3F2PTHG is a power module containing 7 m/ 1200 V SiC MOSFET full−bridge and a thermistor with HPS DBC in an F2 package. Features • 7 m / 1200 V M3S SiC MOSFET Full−Bridge • HPS DBC • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Ap

文件：502.81 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：NXH008T120M3F2PTHG；Package：F2-TNPC；Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, TNPC Topology, F2 Package

The NXH008T120M3F2PTHG is a power module containing an 8 m / 1200 V SiC MOSFET TNPC and a thermistor with HPS DBC in an F2 package. Features • 8 m / 1200 V M3S SiC MOSFET TNPC • HPS DBC • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM

文件：1.02772 Mbytes 页数：16 Pages

ONSEMI

安森美半导体

丝印：NXH010P120MNF1PG；Package：F1-2PACK；F1-2PACK SiC MOSFET Module

General Description The NXH010P120MNF1 is a power module containing an 10 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 10 m/1200V SiC MOSFET Half Bridge • Thermistor • Options With Pre−Applied Thermal Interface Material (TIM) and Without Pre−Applied TIM

文件：1.87894 Mbytes 页数：12 Pages

ONSEMI

安森美半导体