型号：NXH350N100H4Q2F2S1G；Package：Q2PACK；Three Level NPC Q2Pack Module

This high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes. Features • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layo

文件：2.74812 Mbytes 页数：20 Pages

ONSEMI

安森美半导体

型号：NXH350N100H4Q2F2S1G；Package：Q2PACK；Three Level NPC Q2Pack Module

文件：3.37653 Mbytes 页数：20 Pages

ONSEMI

安森美半导体

型号：NXH350N100H4Q2F2S1G-R；Package：Q2PACK；Three Level NPC Q2Pack Module

This high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes. Features • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layo

文件：2.74812 Mbytes 页数：20 Pages

ONSEMI

安森美半导体

型号：NXH350N100H4Q2F2S1G；Package：Q2PACK；Three Level NPC Q2Pack Module

This high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes. Features • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layo

文件：2.74812 Mbytes 页数：20 Pages

ONSEMI

安森美半导体

型号：NXH350N100H4Q2F2S1G；Package：Q2PACK；Three Level NPC Q2Pack Module

文件：3.37653 Mbytes 页数：20 Pages

ONSEMI

安森美半导体

型号：NXH350N100H4Q2F2S1G-R；Package：Q2PACK；Three Level NPC Q2Pack Module

This high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes. Features • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layo

文件：2.74812 Mbytes 页数：20 Pages

ONSEMI

安森美半导体