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NXH800A100L4Q2F2P1G

Marking:NXH800A100L4Q2F2P1G;Package:Q2PACK;Three Level ANPC Q2Pack Module

Thishigh−density,integratedpowermodulecombines high−performanceIGBTswithruggedanti−paralleldiodes. Features •ExtremelyEfficientTrenchwithFieldStopTechnology •LowSwitchingLossReducesSystemPowerDissipation •ModuleDesignOffersHighPowerDensity •LowInductiveLayo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NXH800A100L4Q2F2P1G

Marking:NXH800A100L4Q2F2P1G;Package:Q2PACK;Three Level ANPC Q2Pack Module

Thishigh−density,integratedpowermodulecombines high−performanceIGBTswithruggedanti−paralleldiodes. Features •ExtremelyEfficientTrenchwithFieldStopTechnology •LowSwitchingLossReducesSystemPowerDissipation •ModuleDesignOffersHighPowerDensity •LowInductiveLayo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NXH800A100L4Q2F2P1G

Marking:NXH800A100L4Q2F2P1G;Package:Q2PACK;Three Level ANPC Q2Pack Module

Thishigh−density,integratedpowermodulecombines high−performanceIGBTswithruggedanti−paralleldiodes. Features •ExtremelyEfficientTrenchwithFieldStopTechnology •LowSwitchingLossReducesSystemPowerDissipation •ModuleDesignOffersHighPowerDensity •LowInductiveLayout

ONSEMION Semiconductor

安森美半导体安森美半导体公司

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