型号：NXH80B120MNQ0SNG；Package：Q0BOOST；Silicon Carbide (SiC) Module – EliteSiC, 80 mohm SiC M1 MOSFET, 1200 V 20 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

The NXH80B120MNQ0SNG is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V 80 m SiC MOSFETs • Low Reverse Re

文件：679.76 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

型号：NXH80B120MNQ0SNG；Package：Q0BOOST；Dual Boost Power Module

文件：763.4 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

型号：NXH80B120MNQ0SNG；Package：Q0BOOST；Silicon Carbide (SiC) Module – EliteSiC, 80 mohm SiC M1 MOSFET, 1200 V 20 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

The NXH80B120MNQ0SNG is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V 80 m SiC MOSFETs • Low Reverse Re

文件：679.76 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

型号：NXH80B120MNQ0SNG；Package：Q0BOOST；Dual Boost Power Module

文件：763.4 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

型号：NXH80B120MNQ0SNG_V01；Silicon Carbide (SiC) Module – EliteSiC, 80 mohm SiC M1 MOSFET, 1200 V 20 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

The NXH80B120MNQ0SNG is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V 80 m SiC MOSFETs • Low Reverse Re

文件：679.76 Kbytes 页数：13 Pages

ONSEMI

安森美半导体