首页>NXH80B120MNQ0SNG_V01>规格书详情
NXH80B120MNQ0SNG_V01中文资料安森美半导体数据手册PDF规格书
| 厂商型号 |
NXH80B120MNQ0SNG_V01 |
| 功能描述 | Silicon Carbide (SiC) Module – EliteSiC, 80 mohm SiC M1 MOSFET, 1200 V 20 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package |
| 文件大小 |
679.76 Kbytes |
| 页面数量 |
13 页 |
| 生产厂商 | ON Semiconductor |
| 企业简称 |
ONSEMI【安森美半导体】 |
| 中文名称 | 安森美半导体公司官网 |
| 原厂标识 |  |
| 数据手册 | |
| 更新时间 | 2025-6-24 18:31:00 |
| 人工找货 | NXH80B120MNQ0SNG_V01价格和库存，欢迎联系客服免费人工找货 |
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NXH80B120MNQ0SNG_V01规格书详情
The NXH80B120MNQ0SNG is a power module containing a dual
boost stage. The integrated SiC MOSFETs and SiC Diodes provide
lower conduction losses and switching losses, enabling designers to
achieve high efficiency and superior reliability.
Features
• 1200 V 80 m SiC MOSFETs
• Low Reverse Recovery and Fast Switching SiC Diodes
• 1600 V Bypass and Anti−parallel Diodes
• Low Inductive Layout
• Solderable Pins
• Thermistor
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
NA |
25000 |
ON全系列可订货 |
询价 | ||
onsemi(安森美) |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | |||
onsemi |
两年内 |
NA |
24 |
实单价格可谈 |
询价 | ||
ON |
23+ |
原厂原封 |
24 |
订货1周 原装正品 |
询价 | ||
ON |
1922 |
40 |
公司优势库存 热卖中! |
询价 | |||
SAMYOUNG |
2410+ |
con |
9000 |
十年芯路!只做原装!一直起卖! |
询价 | ||
onsemi(安森美) |
2021+ |
- |
499 |
询价 | |||
ON Semiconductor |
22+ |
20PIM/Q0PACK (55x32.5) |
9000 |
原厂渠道,现货配单 |
询价 | ||
ON |
2022+ |
PIM-20 / Q0PACK |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
SAMYOUNG |
10 |
询价 |
