NXH80B120MNQ0SNG分立半导体产品的晶体管-IGBT-模块规格书PDF中文资料

NXH80B120MNQ0SNG属于分立半导体产品的晶体管-IGBT-模块。由安森美半导体公司制造生产的NXH80B120MNQ0SNG晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。

The NXH80B120MNQ0SNG is a power module containing a dual

boost stage. The integrated SiC MOSFETs and SiC Diodes provide

lower conduction losses and switching losses, enabling designers to

achieve high efficiency and superior reliability.

Features

• 1200 V 80 m SiC MOSFETs

• Low Reverse Recovery and Fast Switching SiC Diodes

• 1600 V Bypass and Anti−parallel Diodes

• Low Inductive Layout

• Solderable Pins

• Thermistor

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• Solar Inverters

• Uninterruptable Power Supplies