丝印：NXH40B120MNQ0SNG；Package：Q0PACK；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V 40 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

Description The NXH40B120MNQ0SNG is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V, 40 m SiC MOSFETs •

文件：645.25 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：NXH40B120MNQ0SNG；Package：Q0PACK；Dual Boost Power Module

文件：730.33 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：NXH40B120MNQ0SNG；Package：Q0PACK；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V 40 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

Description The NXH40B120MNQ0SNG is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V, 40 m SiC MOSFETs •

文件：645.25 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：NXH40B120MNQ0SNG；Package：Q0PACK；Dual Boost Power Module

文件：730.33 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V 40 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

Description The NXH40B120MNQ0SNG is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V, 40 m SiC MOSFETs •

文件：645.25 Kbytes 页数：13 Pages

ONSEMI

安森美半导体