NXH40B120MNQ0SNG_V01中文资料安森美半导体数据手册PDF规格书

厂商型号	NXH40B120MNQ0SNG_V01
功能描述	Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V 40 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package
文件大小	645.25 Kbytes
页面数量	13 页
生产厂商	ON Semiconductor
企业简称	ONSEMI【安森美半导体】
中文名称	安森美半导体公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-22 22:59:00
人工找货	NXH40B120MNQ0SNG_V01价格和库存，欢迎联系客服免费人工找货

Description

The NXH40B120MNQ0SNG is a power module containing a dual

boost stage. The integrated SiC MOSFETs and SiC Diodes provide

lower conduction losses and switching losses, enabling designers to

achieve high efficiency and superior reliability.

Features

• 1200 V, 40 m SiC MOSFETs

• Low Reverse Recovery and Fast Switching SiC Diodes

• 1200 V Bypass and Anti−parallel Diodes

• Low Inductive Layout

• Solder Pins

• Thermistor

• These Device is Pb−Free, Halogen Free and is RoHS Compliant

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies