型号：NXH40B120MNQ1SNG；Package：PIM32；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package

The NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V 40 m SiC MOSFETs • Low R

文件：923.13 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

型号：NXH40B120MNQ1SNG；Package：PIM32；3 Channel Boost Q1 Power Module

文件：923.94 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

型号：NXH40B120MNQ1SNG；Package：PIM32；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package

The NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V 40 m SiC MOSFETs • Low R

文件：923.13 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

型号：NXH40B120MNQ1SNG；Package：PIM32；3 Channel Boost Q1 Power Module

文件：923.94 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

型号：NXH40B120MNQ1SNG_V01；Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package

The NXH40B120MNQ1SNG is a power module containing a three channel boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V 40 m SiC MOSFETs • Low R

文件：923.13 Kbytes 页数：12 Pages

ONSEMI

安森美半导体