丝印：NXH450B100H4Q2F2PG；Package：Q2BOOST；Q2BOOST Module

Description The NXH450B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor. Features • Silicon/SiC Hybrid Technology Maximizes P

文件：1.28637 Mbytes 页数：14 Pages

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丝印：NXH450B100H4Q2F2PG；Package：Q2BOOST-Case180BG；Q2BOOST Module

文件：1.06288 Mbytes 页数：14 Pages

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安森美半导体

丝印：NXH450B100H4Q2F2PG-R；Package：Q2BOOST；Q2BOOST Module

Description The NXH450B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor. Features • Silicon/SiC Hybrid Technology Maximizes P

文件：1.28637 Mbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：NXH450B100H4Q2F2PG；Package：Q2BOOST；Q2BOOST Module

Description The NXH450B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor. Features • Silicon/SiC Hybrid Technology Maximizes P

文件：1.28637 Mbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：NXH450B100H4Q2F2PG；Package：Q2BOOST-Case180BG；Q2BOOST Module

文件：1.06288 Mbytes 页数：14 Pages

ONSEMI

安森美半导体

丝印：NXH450B100H4Q2F2PG-R；Package：Q2BOOST；Q2BOOST Module

Description The NXH450B100H4Q2 is a Si/SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor. Features • Silicon/SiC Hybrid Technology Maximizes P

文件：1.28637 Mbytes 页数：14 Pages

ONSEMI

安森美半导体