NXH011F120M3F2PTHG

Marking：NXH011F120M3F2PTHG；Package：F2FULLBR；Silicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

TheNXH011F120M3F2PTHGisapowermodulecontaining 11m/1200VSiCMOSFETfull−bridgeandathermistorwithHPS DBCinanF2package. Features 11m/1200VM3SSiCMOSFETFull−Bridge HPSDBC Thermistor OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−