NXH011F120M3F2PTHG丝印代码丝印对应型号-114ic电子网

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NXH011F120M3F2PTHG	文件：518.76 Kbytes Page：12 Pages	型号：NXH011F120M3F2PTHG；Package：F2FULLBR；Silicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package The NXH011F120M3F2PTHG is a power module containing 11 m / 1200 V SiC MOSFET full−bridge and a thermistor with HPS DBC in an F2 package. Features  11 m / 1200 V M3S SiC MOSFET Full−Bridge  HPS DBC  Thermistor  Options with Pre−Applied Thermal Interface Material (TIM) and without Pre− 文件：518.76 Kbytes 页数：12 Pages	ONSEMI 安森美半导体	ONSEMI
NXH011F120M3F2PTHG	文件：518.76 Kbytes Page：12 Pages	型号：NXH011F120M3F2PTHG；Package：F2FULLBR；Silicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package The NXH011F120M3F2PTHG is a power module containing 11 m / 1200 V SiC MOSFET full−bridge and a thermistor with HPS DBC in an F2 package. Features  11 m / 1200 V M3S SiC MOSFET Full−Bridge  HPS DBC  Thermistor  Options with Pre−Applied Thermal Interface Material (TIM) and without Pre− 文件：518.76 Kbytes 页数：12 Pages	ONSEMI 安森美半导体	ONSEMI

更多NXH011F120M3F2PTHG供应商更新时间2025-8-7 14:01:00