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NXH100B120H3Q0SG	文件：1.5026 Mbytes Page：16 Pages	型号：NXH100B120H3Q0SG；Package：Q0BOOST；Dual Boost Power Module The NXH100B120H3Q0 is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V Ultra Field Stop IGBTs • 文件：1.5026 Mbytes 页数：16 Pages	ONSEMI 安森美半导体	ONSEMI
NXH100B120H3Q0SG	文件：1.44776 Mbytes Page：15 Pages	型号：NXH100B120H3Q0SG；Package：Q0BOOST-Case180AJ；Dual Boost Power Module 文件：1.44776 Mbytes 页数：15 Pages	ONSEMI 安森美半导体	ONSEMI
NXH100B120H3Q0SG	文件：1.5026 Mbytes Page：16 Pages	型号：NXH100B120H3Q0SG；Package：Q0BOOST；Dual Boost Power Module The NXH100B120H3Q0 is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V Ultra Field Stop IGBTs • 文件：1.5026 Mbytes 页数：16 Pages	ONSEMI 安森美半导体	ONSEMI
NXH100B120H3Q0SG	文件：1.44776 Mbytes Page：15 Pages	型号：NXH100B120H3Q0SG；Package：Q0BOOST-Case180AJ；Dual Boost Power Module 文件：1.44776 Mbytes 页数：15 Pages	ONSEMI 安森美半导体	ONSEMI

更多NXH100B120H3Q0SG供应商更新时间2025-8-7 17:01:00