NXH300B100H4Q2F2PG芯片代码Marking-114ic电子网

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NXH300B100H4Q2F2PG	文件：2.2597 Mbytes Page：14 Pages	型号：NXH300B100H4Q2F2PG；Package：PIM53；Q2BOOST Module This high−density, integrated power module combines high−performance IGBTs with 1200 V SiC diode. Features • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layout • 3−cha 文件：2.2597 Mbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI
NXH300B100H4Q2F2PG	文件：2.24574 Mbytes Page：14 Pages	型号：NXH300B100H4Q2F2PG；Package：Q2BOOST-PIM53；Q2BOOST Module 文件：2.24574 Mbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI
NXH300B100H4Q2F2PG	文件：2.2597 Mbytes Page：14 Pages	型号：NXH300B100H4Q2F2PG；Package：PIM53；Q2BOOST Module This high−density, integrated power module combines high−performance IGBTs with 1200 V SiC diode. Features • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Module Design Offers High Power Density • Low Inductive Layout • 3−cha 文件：2.2597 Mbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI
NXH300B100H4Q2F2PG	文件：2.24574 Mbytes Page：14 Pages	型号：NXH300B100H4Q2F2PG；Package：Q2BOOST-PIM53；Q2BOOST Module 文件：2.24574 Mbytes 页数：14 Pages	ONSEMI 安森美半导体	ONSEMI

更多NXH300B100H4Q2F2PG供应商更新时间2025-8-7 15:06:00