型号：NXH240B120H3Q1PG；Package：PIM32；3 Channel Q1 BOOST Module

The NXH240B120H3Q1PG is a case power module containing a three channel BOOST stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V Ultra Fie

文件：1.9612 Mbytes 页数：15 Pages

ONSEMI

安森美半导体

型号：NXH240B120H3Q1PG；Package：Q1BOOST,Case180AX；3 Channel Q1 BOOST Module

文件：1.81313 Mbytes 页数：14 Pages

ONSEMI

安森美半导体

型号：NXH240B120H3Q1PG-R；Package：PIM32；3 Channel Q1 BOOST Module

The NXH240B120H3Q1PG is a case power module containing a three channel BOOST stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V Ultra Fie

文件：1.9612 Mbytes 页数：15 Pages

ONSEMI

安森美半导体

型号：NXH240B120H3Q1PG；Package：PIM32；3 Channel Q1 BOOST Module

The NXH240B120H3Q1PG is a case power module containing a three channel BOOST stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V Ultra Fie

文件：1.9612 Mbytes 页数：15 Pages

ONSEMI

安森美半导体

型号：NXH240B120H3Q1PG；Package：Q1BOOST,Case180AX；3 Channel Q1 BOOST Module

文件：1.81313 Mbytes 页数：14 Pages

ONSEMI

安森美半导体

型号：NXH240B120H3Q1PG-R；Package：PIM32；3 Channel Q1 BOOST Module

The NXH240B120H3Q1PG is a case power module containing a three channel BOOST stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V Ultra Fie

文件：1.9612 Mbytes 页数：15 Pages

ONSEMI

安森美半导体

型号：NXH240B120H3Q1PG_V01；3 Channel Q1 BOOST Module

The NXH240B120H3Q1PG is a case power module containing a three channel BOOST stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V Ultra Fie

文件：1.9612 Mbytes 页数：15 Pages

ONSEMI

安森美半导体