型号：NXH020F120MNF1PTG；Package：F1-4PACK；F1-4PACK SiC MOSFET Module

The NXH020F120MNF1 is a power module containing an 20 m/1200 V SiC MOSFET full bridge and a thermistor in an F1 package. Features • 20 m / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Press−Fit Pins

文件：1.57633 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

型号：NXH020F120MNF1PTG；Package：F1-4PACK；Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

The NXH020F120MNF1 is a power module containing an 20 m/1200 V SiC MOSFET full bridge and a thermistor in an F1 package. Features • 20 m / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Press−Fit Pins

文件：1.64076 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

型号：NXH020F120MNF1PTG；Package：F1-4PACK；F1-4PACK SiC MOSFET Module

The NXH020F120MNF1 is a power module containing an 20 m/1200 V SiC MOSFET full bridge and a thermistor in an F1 package. Features • 20 m / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Press−Fit Pins

文件：1.57633 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

型号：NXH020F120MNF1PTG；Package：F1-4PACK；Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

The NXH020F120MNF1 is a power module containing an 20 m/1200 V SiC MOSFET full bridge and a thermistor in an F1 package. Features • 20 m / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Press−Fit Pins

文件：1.64076 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

型号：NXH020F120MNF1PTG_V01；Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

The NXH020F120MNF1 is a power module containing an 20 m/1200 V SiC MOSFET full bridge and a thermistor in an F1 package. Features • 20 m / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Press−Fit Pins

文件：1.64076 Mbytes 页数：13 Pages

ONSEMI

安森美半导体