型号：NXH020P120MNF1PG；Package：F1-2PACK；F1-2 PACK SiC MOSFET Module

The NXH020P120MNF1 is a power module containing an 20 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 20 m/1200 V SiC MOSFET Half Bridge • Thermistor • Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM • Press−fit Pins

文件：1.08892 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

型号：NXH020P120MNF1PG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

The NXH020P120MNF1 is a power module containing an 20 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 20 m/1200 V SiC MOSFET Half Bridge • Thermistor • Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM • Press−fit Pins

文件：1.7239 Mbytes 页数：14 Pages

ONSEMI

安森美半导体

型号：NXH020P120MNF1PG；Package：F1-2PACK；F1-2 PACK SiC MOSFET Module

The NXH020P120MNF1 is a power module containing an 20 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 20 m/1200 V SiC MOSFET Half Bridge • Thermistor • Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM • Press−fit Pins

文件：1.08892 Mbytes 页数：8 Pages

ONSEMI

安森美半导体

型号：NXH020P120MNF1PG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

The NXH020P120MNF1 is a power module containing an 20 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 20 m/1200 V SiC MOSFET Half Bridge • Thermistor • Options with Pre−applied Thermal Interface Material (TIM) and without Pre−applied TIM • Press−fit Pins

文件：1.7239 Mbytes 页数：14 Pages

ONSEMI

安森美半导体