型号：NXH020U90MNF2PTG；Package：F2-VIENNA；F2-VIENNA SiC MOSFET Module

The NXH020U90MNF2 is a power module containing a Vienna Rectifier module consisting of two 10 m, 900 V SiC MOSFETs, two 100 A, 1200 V SiC diodes and a thermistor in an F2 package. Features • Neutral Point: 10 m, 900 V SiC MOSFETs • Boost Diodes: 100 A, 1200 V SiC Diodes • Thermistor • P

文件：2.21438 Mbytes 页数：14 Pages

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安森美半导体

型号：NXH020U90MNF2PTG；Package：F2-VIENNA；Silicon Carbide (SiC) Module – EliteSiC, 2x10mohm SiC M1 MOSFET, 1200 V, 2 x 100 A, Vienna Module 900 V, F2 Package

The NXH020U90MNF2 is a power module containing a Vienna Rectifier module consisting of two 10 m, 900 V SiC MOSFETs, two 100 A, 1200 V SiC diodes and a thermistor in an F2 package. Features • Neutral Point: 10 m, 900 V SiC MOSFETs • Boost Diodes: 100 A, 1200 V SiC Diodes • Thermistor • P

文件：2.20099 Mbytes 页数：14 Pages

ONSEMI

安森美半导体

型号：NXH020U90MNF2PTG；Package：F2-VIENNA；F2-VIENNA SiC MOSFET Module

The NXH020U90MNF2 is a power module containing a Vienna Rectifier module consisting of two 10 m, 900 V SiC MOSFETs, two 100 A, 1200 V SiC diodes and a thermistor in an F2 package. Features • Neutral Point: 10 m, 900 V SiC MOSFETs • Boost Diodes: 100 A, 1200 V SiC Diodes • Thermistor • P

文件：2.21438 Mbytes 页数：14 Pages

ONSEMI

安森美半导体

型号：NXH020U90MNF2PTG；Package：F2-VIENNA；Silicon Carbide (SiC) Module – EliteSiC, 2x10mohm SiC M1 MOSFET, 1200 V, 2 x 100 A, Vienna Module 900 V, F2 Package

The NXH020U90MNF2 is a power module containing a Vienna Rectifier module consisting of two 10 m, 900 V SiC MOSFETs, two 100 A, 1200 V SiC diodes and a thermistor in an F2 package. Features • Neutral Point: 10 m, 900 V SiC MOSFETs • Boost Diodes: 100 A, 1200 V SiC Diodes • Thermistor • P

文件：2.20099 Mbytes 页数：14 Pages

ONSEMI

安森美半导体

型号：NXH020U90MNF2PTG_V01；Silicon Carbide (SiC) Module – EliteSiC, 2x10mohm SiC M1 MOSFET, 1200 V, 2 x 100 A, Vienna Module 900 V, F2 Package

The NXH020U90MNF2 is a power module containing a Vienna Rectifier module consisting of two 10 m, 900 V SiC MOSFETs, two 100 A, 1200 V SiC diodes and a thermistor in an F2 package. Features • Neutral Point: 10 m, 900 V SiC MOSFETs • Boost Diodes: 100 A, 1200 V SiC Diodes • Thermistor • P

文件：2.20099 Mbytes 页数：14 Pages

ONSEMI

安森美半导体