NXH015P120M3F1PTG芯片代码丝印对应型号-114ic电子网

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NXH015P120M3F1PTG	文件：567.75 Kbytes Page：12 Pages	型号：NXH015P120M3F1PTG；Silicon Carbide (SiC) Module – 15 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package The NXH015P120M3F1 is a power module containing 15 m/ 1200 V SiC MOSFET half−bridge and a thermistor in an F1 package. Features • 15 m / 1200 V M3S SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Press−Fit Pins 文件：567.75 Kbytes 页数：12 Pages	ONSEMI 安森美半导体	ONSEMI
NXH015P120M3F1PTG	文件：567.75 Kbytes Page：12 Pages	型号：NXH015P120M3F1PTG；Silicon Carbide (SiC) Module – 15 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package The NXH015P120M3F1 is a power module containing 15 m/ 1200 V SiC MOSFET half−bridge and a thermistor in an F1 package. Features • 15 m / 1200 V M3S SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Press−Fit Pins 文件：567.75 Kbytes 页数：12 Pages	ONSEMI 安森美半导体	ONSEMI

更多NXH015P120M3F1PTG供应商更新时间2025-8-7 15:01:00