NXH008T120M3F2PTHG

Marking：NXH008T120M3F2PTHG；Package：F2-TNPC；Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, TNPC Topology, F2 Package

TheNXH008T120M3F2PTHGisapowermodulecontainingan 8m/1200VSiCMOSFETTNPCandathermistorwithHPSDBC inanF2package. Features •8m/1200VM3SSiCMOSFETTNPC •HPSDBC •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−AppliedTIM