型号：NXH008T120M3F2PTHG；Package：F2-TNPC；Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, TNPC Topology, F2 Package

The NXH008T120M3F2PTHG is a power module containing an 8 m / 1200 V SiC MOSFET TNPC and a thermistor with HPS DBC in an F2 package. Features • 8 m / 1200 V M3S SiC MOSFET TNPC • HPS DBC • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM

文件：1.02772 Mbytes 页数：16 Pages

ONSEMI

安森美半导体

型号：NXH008T120M3F2PTHG；Package：F2-TNPC；Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, TNPC Topology, F2 Package

The NXH008T120M3F2PTHG is a power module containing an 8 m / 1200 V SiC MOSFET TNPC and a thermistor with HPS DBC in an F2 package. Features • 8 m / 1200 V M3S SiC MOSFET TNPC • HPS DBC • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM

文件：1.02772 Mbytes 页数：16 Pages

ONSEMI

安森美半导体