型号：NXH010P120MNF1PTNG；Package：F1-2PACK；F1-2PACK SiC MOSFET Module

General Description The NXH010P120MNF1 is a power module containing an 10 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 10 m/1200V SiC MOSFET Half Bridge • Thermistor • Options With Pre−Applied Thermal Interface Material (TIM) and Without Pre−Applied TIM

文件：1.87894 Mbytes 页数：12 Pages

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安森美半导体

型号：NXH010P120MNF1PTNG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

General Description The NXH010P120MNF1 is a power module containing an 10 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 10 m/1200V SiC MOSFET Half Bridge • Thermistor • Options With Pre−Applied Thermal Interface Material (TIM) and Without Pre−Applied TIM

文件：2.03014 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

型号：NXH010P120MNF1PTNG；Package：F1-2PACK；F1-2PACK SiC MOSFET Module

General Description The NXH010P120MNF1 is a power module containing an 10 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 10 m/1200V SiC MOSFET Half Bridge • Thermistor • Options With Pre−Applied Thermal Interface Material (TIM) and Without Pre−Applied TIM

文件：1.87894 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

型号：NXH010P120MNF1PTNG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

General Description The NXH010P120MNF1 is a power module containing an 10 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 10 m/1200V SiC MOSFET Half Bridge • Thermistor • Options With Pre−Applied Thermal Interface Material (TIM) and Without Pre−Applied TIM

文件：2.03014 Mbytes 页数：13 Pages

ONSEMI

安森美半导体

型号：NXH010P120MNF1PTNG_V01；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

General Description The NXH010P120MNF1 is a power module containing an 10 m/1200 V SiC MOSFET half bridge and a thermistor in an F1 package. Features • 10 m/1200V SiC MOSFET Half Bridge • Thermistor • Options With Pre−Applied Thermal Interface Material (TIM) and Without Pre−Applied TIM

文件：2.03014 Mbytes 页数：13 Pages

ONSEMI

安森美半导体