NXH007F120M3F2PTHG中文资料安森美半导体数据手册PDF规格书

厂商型号	NXH007F120M3F2PTHG
功能描述	Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package
丝印标识	NXH007F120M3F2PTHG
封装外壳	F2FULLBR
文件大小	502.81 Kbytes
页面数量	11 页
生产厂商	ON Semiconductor
企业简称	ONSEMI【安森美半导体】
中文名称	安森美半导体公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-22 14:01:00
人工找货	NXH007F120M3F2PTHG价格和库存，欢迎联系客服免费人工找货

The NXH007F120M3F2PTHG is a power module containing

7 m/ 1200 V SiC MOSFET full−bridge and a thermistor with HPS

DBC in an F2 package.

Features

• 7 m / 1200 V M3S SiC MOSFET Full−Bridge

• HPS DBC

• Thermistor

• Options with Pre−Applied Thermal Interface Material (TIM) and

without Pre−Applied TIM

• Press−Fit Pins

• These Devices are Pb−Free, Halide Free and are RoHS Compliant

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Electric Vehicle Charging Stations

• Industrial Power