型号：NXH007F120M3F2PTHG；Package：F2FULLBR；Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

The NXH007F120M3F2PTHG is a power module containing 7 m/ 1200 V SiC MOSFET full−bridge and a thermistor with HPS DBC in an F2 package. Features • 7 m / 1200 V M3S SiC MOSFET Full−Bridge • HPS DBC • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Ap

文件：502.81 Kbytes 页数：11 Pages

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安森美半导体

型号：NXH007F120M3F2PTHG；Package：F2FULLBR；Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

The NXH007F120M3F2PTHG is a power module containing 7 m/ 1200 V SiC MOSFET full−bridge and a thermistor with HPS DBC in an F2 package. Features • 7 m / 1200 V M3S SiC MOSFET Full−Bridge • HPS DBC • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Ap

文件：502.81 Kbytes 页数：11 Pages

ONSEMI

安森美半导体