型号：NXH004P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

The NXH004P120M3F2PTHG is a power module containing 4 m / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. Features • 4 m / 1200 V M3S SiC MOSFET Half−Bridge • HPS DBC • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−

文件：2.10996 Mbytes 页数：13 Pages

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安森美半导体

型号：NXH004P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

The NXH004P120M3F2PTHG is a power module containing 4 m / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. Features • 4 m / 1200 V M3S SiC MOSFET Half−Bridge • HPS DBC • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−

文件：2.10996 Mbytes 页数：13 Pages

ONSEMI

安森美半导体