型号：NXH006P120MNF2PTG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

The NXH006P120MNF2 is a power module containing an 6 m / 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. Features • 6 m / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Options with So

文件：1.72108 Mbytes 页数：10 Pages

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安森美半导体

型号：NXH006P120MNF2PTG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

The NXH006P120MNF2 is a power module containing an 6 m / 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. Features • 6 m / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Options with So

文件：1.72108 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

型号：NXH006P120MNF2PTG_V01；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package

The NXH006P120MNF2 is a power module containing an 6 m / 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. Features • 6 m / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Options with So

文件：1.72108 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

型号：NXH006P120MNF2PTG；F2-Half Bridge SiC MOSFET Module

文件：2.10178 Mbytes 页数：10 Pages

ONSEMI

安森美半导体