NXH004P120M3F2PTNG

Marking：NXH004P120M3F2PTNG；Package：PIM36；Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

TheNXH004P120M3F2PTNGisapowermodulecontaining3m/ 1200VSiCMOSFEThalf−bridgeandathermistorwithSi3N4DBCin anF2package. Features •4m/1200VM3SSiCMOSFETHalf−Bridge •Si3N4DBC •Thermistor •Pre−AppliedThermalInterfaceMaterial(TIM) •Press−FitPins •These