NXH006P120M3F2PTHG

Marking：NXH006P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

TheNXH006P120M3F2PTHGisapowermodulecontaining6m/ 1200VSiCMOSFEThalf−bridgeandathermistorwithHPSDBCin anF2package. Features 6m/1200VM3SSiCMOSFETHalf−Bridge HPSDBC Thermistor Pre−AppliedThermalInterfaceMaterial(TIM) Press−FitPins TheseDevic