型号：NXH006P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

The NXH006P120M3F2PTHG is a power module containing 6 m / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. Features  6 m / 1200 V M3S SiC MOSFET Half−Bridge  HPS DBC  Thermistor  Pre−Applied Thermal Interface Material (TIM)  Press−Fit Pins  These Devic

文件：407.21 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

型号：NXH006P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

The NXH006P120M3F2PTHG is a power module containing 6 m / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. Features  6 m / 1200 V M3S SiC MOSFET Half−Bridge  HPS DBC  Thermistor  Pre−Applied Thermal Interface Material (TIM)  Press−Fit Pins  These Devic

文件：407.21 Kbytes 页数：12 Pages

ONSEMI

安森美半导体