NXH003P120M3F2PTHG

Marking：NXH003P120M3F2PTHG；Package：F2HALFBR；Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

TheNXH003P120M3F2PTHGisapowermodulecontaining3m/ 1200VSiCMOSFEThalf−bridgeandathermistorwithHPSDBCin anF2package. Features •3m/1200VM3SSiCMOSFETHalf−Bridge •HPSDBC •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−