NXH003P120M3F2PTNG

丝印：NXH003P120M3F2PTNG；Package：PIM36；Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

TheNXH003P120M3F2PTNGisapowermodulecontaining3m/ 1200VSiCMOSFEThalf−bridgeandathermistorwithSi3N4DBCin anF2package. Features •3m/1200VM3SSiCMOSFETHalf−Bridge •Si3N4DBC •Thermistor •Pre−AppliedThermalInterfaceMaterial(TIM) •Press−FitPins •These

NXH003P120M3F2PTHG

SiliconCarbide(SiC)Module–EliteSiC,3mohmSiCM3MOSFET,1200V,2-PACKHalfBridgeTopology,F2PackagewithHPSDBC

TheNXH003P120M3F2PTHGisapowermodulecontaining3m/ 1200VSiCMOSFEThalf−bridgeandathermistorwithHPSDBCin anF2package. Features •3m/1200VM3SSiCMOSFETHalf−Bridge •HPSDBC •Thermistor •OptionswithPre−AppliedThermalInterfaceMaterial(TIM)and withoutPre−