NXH010P120MNF1PG

型号：NXH010P120MNF1PG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P120MNF1PNG

型号：NXH010P120MNF1PNG；Package：F1-2PACK；F1-2PACK SiC MOSFET Module

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P120MNF1PNG

型号：NXH010P120MNF1PNG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P120MNF1PTG

型号：NXH010P120MNF1PTG；Package：F1-2PACK；F1-2PACK SiC MOSFET Module

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P120MNF1PTG

型号：NXH010P120MNF1PTG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P120MNF1PTNG

型号：NXH010P120MNF1PTNG；Package：F1-2PACK；F1-2PACK SiC MOSFET Module

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P120MNF1PTNG

型号：NXH010P120MNF1PTNG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

GeneralDescription TheNXH010P120MNF1isapowermodulecontainingan 10m/1200VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •10m/1200VSiCMOSFETHalfBridge •Thermistor •OptionsWithPre−AppliedThermalInterfaceMaterial(TIM)and WithoutPre−AppliedTIM

NXH010P90MNF1PG

型号：NXH010P90MNF1PG；Package：F1-2PACK；F1-2 PACK SiC MOSFET Module

TheNXH010P120MNF1isapowermodulecontainingan 10m/900VSiCMOSFEThalfbridgeandathermistorinanF1package. Features •10m/900VSiCMOSFETHalfBridge •Thermistor •OptionswithPre−appliedThermalInterfaceMaterial(TIM)and withoutPre−appliedTIM •Press−fitPins T

NXH010P90MNF1PG

型号：NXH010P90MNF1PG；Package：F1-2PACK；Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M2 MOSFET, 900 V, 2-PACK Half Bridge Topology, F1 Package

TheNXH010P120MNF1isapowermodulecontainingan 10m/900VSiCMOSFEThalfbridgeandathermistorinanF1 package. Features •10m/900VSiCMOSFETHalfBridge •Thermistor •OptionswithPre−appliedThermalInterfaceMaterial(TIM)and withoutPre−appliedTIM •Press−fitPins

NXH010P90MNF1PTG

型号：NXH010P90MNF1PTG；Package：F1-2PACK；F1-2 PACK SiC MOSFET Module

TheNXH010P120MNF1isapowermodulecontainingan 10m/900VSiCMOSFEThalfbridgeandathermistorinanF1package. Features •10m/900VSiCMOSFETHalfBridge •Thermistor •OptionswithPre−appliedThermalInterfaceMaterial(TIM)and withoutPre−appliedTIM •Press−fitPins T