NTH4L080N120SC1

SiC N-Channel MOSFET

FEATURES ·HighSpeedSwitchingwithLowCapacitances ·HighBlockingVoltagewithLowOn-Resistance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·High-voltageCapacitiveLoads ·Motordrives

NTH4L080N120SC1_V01

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

NTH4L080N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

NTH4L095N065SC1

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 70 m, 31 A

Features •Typ.RDS(on)=70m@VGS=18V Typ.RDS(on)=95m@VGS=15V •UltraLowGateCharge(QG(tot)=50nC) •LowOutputCapacitance(Coss=89pF) •100%AvalancheTested •TJ=175°C •ThisDeviceisPb−FreeandisRoHSCompliant TypicalApplications •SMPS(SwitchingM

NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ

NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ

NTH4L160N120SC1_V01

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ

NTH4L160N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ

NTH4LN061N60S5H

Marking：NTH4LN061N60S5H；Package：TO247-4L；MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247-4L 600 V, 61 m, 41 A

Description TheSUPERFETVMOSFETFASTserieshelpsmaximizesystem efficiencybytheextremelylowswitchinglossesinhardswitching application. Features 650V@TJ=150C/Typ.RDS(on)=48.8m 100AvalancheTested Pb−Free,HalogenFree/BFRFreeandRoHSCompliant Applic

NTHL015N065SC1

Marking：HL015N065SC1；Package：TO-247；Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-3L

Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsec