丝印：H4L028N170M1；Package：TO247-4L；Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm

Features • Typ. RDS(on) = 28 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • High Speed Switching with Low Capacitance (Coss = 200 pF) • 100 Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • UPS • DC/DC Converter • Boost Converter

文件：253.15 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 40mΩ（TYP.）@VGS=20V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：379.08 Kbytes 页数：4 Pages

ISC

无锡固电

碳化硅（SiC）MOSFET – EliteSiC系列，28mohm，1700V，M1，TO-247-4L封装

The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive. • TO247-4LD package for low common source inductance\n• Reduced EON losses\n• 18V to 20V Gate Drive\n• 20V for best performance; 18V for compatibility\n• New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses\n• Improved power density\n• 100% Avalanche Tested\n• Improved robustness;

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm

Features • Typ. RDS(on) = 28 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • High Speed Switching with Low Capacitance (Coss = 200 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • UPS • DC/DC Converter • Boost Convert

文件：253.15 Kbytes 页数：8 Pages

ONSEMI

安森美半导体