Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm

Features • Typ. RDS(on) = 28 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • High Speed Switching with Low Capacitance (Coss = 200 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • UPS • DC/DC Converter • Boost Convert

文件：253.15 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 40mΩ（TYP.）@VGS=20V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：379.08 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm

Features • Typ. RDS(on) = 28 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • High Speed Switching with Low Capacitance (Coss = 200 pF) • 100 Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • UPS • DC/DC Converter • Boost Converter

文件：253.15 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

TO-247

ON/安森美

上传：深圳市周芯芯半导体有限公司

SOT-363

ON/安森美

上传：深圳市琅玥科技有限公司