丝印：H4L028N170M1；Package：TO247-4L；Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm

Features • Typ. RDS(on) = 28 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • High Speed Switching with Low Capacitance (Coss = 200 pF) • 100 Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Typical Applications • UPS • DC/DC Converter • Boost Converter

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