| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking：H4L030120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L Features •Typ.RDS(on)=29m@VGS=18V •UltraLowGateCharge(QG(tot)=107nC) •HighSpeedSwitchingwithLowCapacitance(Coss=106pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Marking：H4L030120M3S；Package：TO-247-4L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L Features •Typ.RDS(on)=29m@VGS=18V •UltraLowGateCharge(QG(tot)=107nC) •HighSpeedSwitchingwithLowCapacitance(Coss=106pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(on | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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