Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Low Switching Losses (Typ. EON 490 J at 40 A, 800 V) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Second Level Interconnection) Typical Applications • Solar Inverters • Electric V

文件：314.02 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A

文件：261.589 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L

Features • Typ. RDS(on) = 22 m @ VGS = 18 V • Low Switching Losses (Typ. EON 490 J at 40 A, 800 V) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Second Level Interconnection) Typical Applications • Solar Inverters • Electric V

文件：314.02 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

碳化硅（SiC）MOSFET – EliteSiC系列，22 mohm，1200V，M3P，TO-247-4L封装

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. • TO247-4LD package for low common source inductance\n• Reduced EON losses\n• 15V to 18V Gate Drive\n• 18V for best performance; 15V for compatibility with IGBT driver circuits\n• New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses\n• Improved power density\n• 100% Avalanche Tested\n;

ONSEMI

安森美半导体