NTH4L022N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L

Features •Typ.RDS(on)=22m@VGS=18V •LowSwitchingLosses(Typ.EON490Jat40A,800V) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onSecondLevelInterconnection) TypicalApplications •SolarInverters •ElectricV

NTH4L022N120M3S

MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A

NTH4L022N120M3S_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L

Features •Typ.RDS(on)=22m@VGS=18V •LowSwitchingLosses(Typ.EON490Jat40A,800V) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onSecondLevelInterconnection) TypicalApplications •SolarInverters •ElectricV

NVH4L022N120M3S

SiliconCarbide(SiC)MOSFET–22mohm,1200V,M3S,TO-247-4

Features •Typ.RDS(on)=22m@VGS=18V •UltraLowGateCharge(QG(tot)=151nC) •HighSpeedSwitchingwithLowCapacitance(Coss=244pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(on

NVH4L022N120M3S

MOSFET-SiCPower,SingleN-Channel,TO247-4L1200V,22m,68A

Features •Typ.RDS(on)=22m@VGS=18V •UltraLowGateCharge(QG(tot)=151nC) •HighSpeedSwitchingwithLowCapacitance(Coss=244pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •TheseDevicesareRoHSCompliant TypicalApplications •AutomotiveOnBoardC