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NTH4L014N120M3P

Silicon Carbide SiC MOSFET - 14mohm, 1200V, M3, TO247-4L

Features •Typ.RDS(on)=14m@VGS=18V •LowSwitchingLosses(Typ.EON1308Jat74A,800V) •100AvalancheTested •TheseDevicesareRoHSCompliant TypicalApplications •SolarInverters •ElectricVehicleChargingStations •UPS(UninterruptiblePowerSupplies) •EnergySto

ONSEMION Semiconductor

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NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr

ONSEMION Semiconductor

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NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr

ONSEMION Semiconductor

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NTH4L015N065SC1_V01

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr

ONSEMION Semiconductor

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NTH4L015N065SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr

ONSEMION Semiconductor

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NTH4L018N075SC1

Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750V, M2, TO-247-4L

Features •Typ.RDS(on)=13.5m@VGS=18V Typ.RDS(on)=18m@VGS=15V •UltraLowGateCharge(QG(tot)=262nC) •HighSpeedSwitchingwithLowCapacitance(Coss=365pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−

ONSEMION Semiconductor

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NTH4L020N090SC1

Marking:H4L020090SC1;Package:TO247-4L;Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L

Features •Typ.RDS(on)=20m@VGS=15V Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=196nC) •LowEffectiveOutputCapacitance(Coss=296pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinter

ONSEMION Semiconductor

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NTH4L020N120SC1

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

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NTH4L020N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

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NTH4L020N120SC1_V01

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

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详细参数

  • 型号:

    NTH

  • 功能描述:

    烙铁 Weller Chisel Tip For WMP Solder Penc

  • RoHS:

  • 制造商:

    Weller

  • 产品:

    Soldering Stations

  • 类型:

    Digital, Iron, Stand, Cleaner

  • 瓦特:

    50 W

  • 最大温度:

    + 850 F

  • 电缆类型:

    US Cord Included

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更多NTH供应商 更新时间2025-7-14 16:06:00