首页 >NTHL020N120SC1>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NTHL020N120SC1 | Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boos | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
NTHL020N120SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boost | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
NTHL020N120SC1 | Marking：NTHL020N120SC1；Package：TO-247；MOSFET - SiC Power, Single N-Channel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boos | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boost | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET - SiC Power, Single N-Channel | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,D2PAK-7L Features •Typ.RDS(on)=20m •UltraLowGateCharge(typ.QG(tot)=220nC) •LowEffectiveOutputCapacitance(typ.Coss=258pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondleve | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-Power,SiliconCarbide,SingleN-ChannelD2PAK7L,1200V,98A,20mOhm | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET??N?륝hannel,SiliconCarbide1200V,20m Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–20mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=20m •UltraLowGateCharge(typ.QG(tot)=203nC) •LowEffectiveOutputCapacitance(typ.Coss=260pF) •100UILTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinte | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-247-3LD |
100000 |
全新原装 |
询价 | ||
onsemi |
24+ |
TO-247-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
onsemi(安森美) |
24+ |
TO-247 |
8110 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON(安森美) |
23+ |
TO-247-3 |
14839 |
公司只做原装正品,假一赔十 |
询价 | ||
ON |
23+ |
TO-247-3 |
26800 |
专业帮助客户找货 配单,诚信可靠! |
询价 | ||
ON(安森美) |
2447 |
TO-247-3 |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
ON |
23+ |
TO-247 |
3000 |
全新原装正品!一手货源价格优势! |
询价 | ||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
ONSEMI |
22 |
SOT-23 |
50 |
全新、原装 |
询价 |
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